100V 2.6mΩ half-bridge gallium nitride (GaN) power stage

VDS (max) (V)         100

RDS(on) (mΩ)          2.6

ID (max) (A)              55

Features                   Built-in bootstrap diode, Half-bridge, Top-side cooled

Rating                     Catalog

Operating temperature range (°C)    -40 to 125

• Integrated half-bridge GaN FETs and driver

• 93V continuous, 100V pulsed voltage rating

• Package optimized for easy PCB layout

• High slew rate switching with low ringing

• 5V external bias power supply

• Supports 3.3V and 5V input logic levels

• Gate driver capable of up to 10MHz switching

• Excellent propagation delay (33ns typical) and matching (2ns typical)

• Internal bootstrap supply voltage clamping to prevent GaN FET overdrive

• Supply rail undervoltage for lockout protection

• Low power consumption

• Exposed top QFN package for top-side cooling

• Large GND pad for bottom-side cooling